Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy

Par administrateur le dim, 03/23/2025 - 09:20
TitreIndepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy
Type de publicationJournal Article
Year of Publication2024
AuteursQiang, L., E. Chereau, P. Regreny, G. Avit, A. Trassoudaine, E. Gil, Y. André, J-M. Bluet, D. Albertini, and G. Brémond
JournalJournal of Applied Physics
Volume136
Ticket3
Date Published07/2024
ISSN0021-8979
DOI10.1063/5.0215140
Indéfini