Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy

By administrateur on Sun, 03/23/2025 - 09:20
TitleIndepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy
Publication TypeJournal Article
Year of Publication2024
AuthorsQiang, L., E. Chereau, P. Regreny, G. Avit, A. Trassoudaine, E. Gil, Y. André, J-M. Bluet, D. Albertini, and G. Brémond
JournalJournal of Applied Physics
Volume136
Issue3
Date Published07/2024
ISSN0021-8979
DOI10.1063/5.0215140
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